A PN junction is made from a single piece of semiconductor that is made to have two differing areas. One end is made to be P-type and the other N-type. This means that both ends of the PN-junction have different properties. One end has an excess of electrons whilst the other has an excess of holes. Where the two areas meet the electrons fill the holes and there are no free holes or electrons. This means that there are no available charge carries in this region. In view of the fact that this area is depleted of charge carriers it is known as the depletion region.

The semiconductor diode PN junction with no bias applied
The depletion region is very thin - often only few thousandths of a millimetre - but this is enough to prevent current flowing in the normal way. However it is found that different effects are noticed dependent upon the way in which the voltage is applied to the junction.

The semiconductor diode PN junction with forward bias
- Current Flow - If the voltage is applied such that the P type area becomes positive and the N type becomes negative, holes are attracted towards the negative voltage and are assisted to jump across the depletion layer. Similarly electrons move towards the positive voltage and jump the depletion layer. Even though the holes and electrons are moving in opposite directions, they carry opposite charges and as a result they represent a current flow in the same direction.
- No current flow - If the voltage is applied to the PN junction in the opposite sense no current flows. The reason for this is that the holes are attracted towards the negative potential that is applied to the P type region. Similarly the electrons are attracted towards the positive potential which is applied to the N type region. In other words the holes and electrons are attracted away from the junction itself and the depletion region increases in width. Accordingly no current flows across the PN junction.

The semiconductor diode PN junction with reverse bias